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Product Category :MOSFET
Vgs (Max) :±20V
Current - Continuous Drain (Id) @ 25°C :5.1A (Ta)
FET Type :N-Channel
Mounting Type :Surface Mount
Gate Charge (Qg) (Max) @ Vgs :38nC @ 10V
Manufacturer :Infineon Technologies
Minimum Quantity :1
Drive Voltage (Max Rds On, Min Rds On) :10V
Operating Temperature :-55°C ~ 150°C (TJ)
FET Feature :-
Series :HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :1647pF @ 75V
Supplier Device Package :8-SO
Packaging :Tube
Rds On (Max) @ Id, Vgs :43 mOhm @ 3.1A, 10V
Power Dissipation (Max) :2.5W (Ta)
Package / Case :8-SOIC (0.154", 3.90mm Width)
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :5V @ 100µA
Drain to Source Voltage (Vdss) :150V
Description :MOSFET N-CH 150V 5.1A 8-SOIC
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