FGL60N100BNTDTU
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Gate-Emitter Leakage Current :+/- 500 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :60 A
Pd - Power Dissipation :180 W
Collector- Emitter Voltage VCEO Max :1000 V
Package / Case :TO-264-3
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 25 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :1.5 V
Manufacturer :Fairchild Semiconductor
Description :IGBT Transistors HIGH POWER
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The FGL60N100BNTDTU,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
