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MT3S111TU,LF

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MT3S111TU,LF

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max) :100mA
Product Status :Active
Transistor Type :NPN
Mounting Type :Surface Mount
Frequency - Transition :10GHz
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series :-
Voltage - Collector Emitter Breakdown (Max) :6V
Supplier Device Package :UFM
Mfr :Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f) :0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Power - Max :800mW
Gain :12.5dB
Package / Case :3-SMD, Flat Lead
Operating Temperature :150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :200 @ 30mA, 5V
Base Product Number :MT3S111
Description :RF SIGE NPN BIPOLAR TRANSISTOR N
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RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
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